IS46TR16256AL-125KBLA2 SDRAM - DDR3L Memory IC 4Gbit Parallel 800 MHz 20 Ns 96-TWBGA
Brand Name:original
Certification:original
Model Number:IS46TR16256AL-125KBLA2
Minimum Order Quantity:1
Delivery Time:1-3working days
Payment Terms:T/T
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Location:
Shenzhen Guangdong China
Address:
Room 405, Building A2, Niushang Zhigu, United Industrial Park, Fengtang Avenue, Shenzhen，Guangdong, China. Post code: 518100
Supplier`s last login times:
within 37 hours
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Product Details
IS46TR16256AL-125KBLA2 SDRAM - DDR3L Memory IC 4Gbit Parallel 800 MHz 20 ns 96-TWBGA
IC DRAM 4GBIT PARALLEL 96TWBGA
Specifications of IS46TR16256AL-125KBLA2
| TYPE | DESCRIPTION |
| Category | Integrated Circuits (ICs) |
| Memory | |
| Mfr | ISSI, Integrated Silicon Solution Inc |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 4Gbit |
| Memory Organization | 256M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 96-TFBGA |
| Supplier Device Package | 96-TWBGA (9x13) |
| Base Product Number | IS46TR16256 |
Features of IS46TR16256AL-125KBLA2
* Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
* Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
* High speed data transfer rates with system frequency up to 1066
MHz
* 8 internal banks for concurrent operation
* 8n-Bit pre-fetch architecture
* Programmable CAS Latency
* Programmable Additive Latency: 0, CL-1,CL-2
* Programmable CAS WRITE latency (CWL) based on tCK
* Programmable Burst Length: 4 and 8
* Programmable Burst Sequence: Sequential or Interleave
* BL switch on the fly
* Auto Self Refresh(ASR)
* Self Refresh Temperature(SRT)
* Refresh Interval:
- 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
- 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
* Partial Array Self Refresh
* Asynchronous RESET pin
* TDQS (Termination Data Strobe) supported (x8 only)
* OCD (Off-Chip Driver Impedance Adjustment)
* Dynamic ODT (On-Die Termination)
* Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
* Write Leveling
* Up to 200 MHz in DLL off mode
* Operating temperature:
- Commercial (TC = 0°C to +95°C)
- Industrial (TC = -40°C to +95°C)
- Automotive, A1 (TC = -40°C to +95°C)
- Automotive, A2 (TC = -40°C to +105°C)
Applications of IS46TR16256AL-125KBLA2
Configuration:
- 512Mx8
- 256Mx16
Package:
- 96-ball BGA (9mm x 13mm) for x16
- 78-ball BGA (9mm x 10.5mm) for x8
Environmental & Export Classifications of IS46TR16256AL-125KBLA2
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0036 |
IS46TR16256AL-125KBLA2 SDRAM - DDR3L Memory IC 4Gbit Parallel 800 MHz 20 Ns 96-TWBGA
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