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S29GL512S11TFI020 Flash Memory Chips
56-TFSOP Package 128 Mb 256 Mb MIRRORBIT™ Flash Parallel 3.0V
Memory Type | Non-Volatile | |
Memory Format | ||
Technology | FLASH - NOR | |
Memory Size | ||
Memory Organization | 32M x 16 | |
Memory Interface | Parallel | |
Write Cycle Time - Word, Page | 60ns | |
Access Time | 110 ns | |
Voltage - Supply | 2.7V ~ 3.6V | |
Operating Temperature | -40°C ~ 85°C (TA) | |
Mounting Type | ||
Package / Case | ||
Supplier Device Package | 56-TSOP |
General description
The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products
fabricated on 65-nm process technology.
These devices offer a fast page access time as fast as 15 ns with a
corresponding random access time as fast as 90 ns. They feature a
Write Buffer that allows a maximum of 256 words/512 bytes to be
programmed in one operation, resulting in faster effective
programming time than standard programming algorithms. This makes
these devices ideal for today’s embedded applications that require
higher density, better performance and lower power consumption.
Distinctive characteristics
• CMOS 3.0 V core with versatile I/O
• 65 nm MIRRORBIT™ Eclipse technology
• Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
• Versatile I/O feature
- Wide I/O voltage range (VIO): 1.65 V to VCC
• ×16 data bus
• Asynchronous 32-byte page read
• 512-byte programming buffer
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