IRF6665TRPBF Mosfet Integrated Circuit Low-RDS(On) For Improved Efficiency

Brand Name:Infineon Technologies
Model Number:IRF6665TRPBF
Minimum Order Quantity:1
Delivery Time:1-3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Verified Supplier
Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
Product Details Company Profile
Product Details

IRF6665TRPBF MOSFET Power Electronics

High-Performance Low-RDS(on) for Improved Efficiency


FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
DIRECTFET™ SH
Package / Case

Product Description:

The IRF6665TRPBF is a power MOSFET from IRF Technologies. This N-Channel MOSFET is designed to handle up to 55 volts and has a low on-resistance of 3.2 milliohms. The maximum drain current is 55 amps, while the maximum power dissipation is up to 740 watts. The device is packaged in a TO-220AB package.


Product Parameters:

- Type: N-Channel MOSFET
- Voltage: 55V
- On-resistance: 3.2 milliohms
- Maximum Drain Current: 55 Amps
- Maximum Power Dissipation: 740 Watts
- Package: TO-220AB


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IRF6665TRPBF Mosfet Integrated Circuit Low-RDS(On) For Improved Efficiency

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