FDD86102 Mosfet Transistor Module High Efficiency And Reliability
Brand Name:onsemi
Model Number:FDD86102
Minimum Order Quantity:1
Delivery Time:1-7days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Multi-origin
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Location:
Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times:
within 38 hours
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Product Details
FDD86102 MOSFET Power Electronics
The FDD86102 is a MOSFET power electronics device designed to provide high-efficiency power conversion. It features low on-resistance and low gate charge for superior power delivery. The device is constructed with a low-profile, thermally-enhanced package and is suitable for use in a variety of applications.
Features:
• Low On-Resistance - RDS(on) : 2.2 mOhm (max)
• Low Gate Charge - Qg : 11.5 nC (max)
• Low Profile, Thermally Enhanced Package
• Halogen-Free and RoHS Compliant
• Suitable for High-Efficiency Power Conversion
• High-Voltage Operation - VDS : 100 V (max)
• High-Current Operation - ID : 30 A (max)
Product Status | Active | |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 24mOhm @ 8A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1035 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.1W (Ta), 62W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | TO-252AA | |
Package / Case | ||
Base Product Number |
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FDD86102 Mosfet Transistor Module High Efficiency And Reliability
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