NVMFS5113PLT1G Mosfet Transistor High Efficiency Low On Resistance
Brand Name:onsemi
Model Number:NVMFS5113PLT1G
Minimum Order Quantity:1
Delivery Time:1-7days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Multi-origin
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Location:
Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times:
within 38 hours
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Product Details
NVMFS5113PLT1G MOSFET Power Electronics
Description: NVMFS5113PLT1G is a MOSFET Power Electronics device. It is a power transistor, a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that can be used to control the flow of electric current in circuits.
Features:
• Robust and reliable
• Low on resistance and low gate charge
• Low output capacitance
• Fast switching speeds
• Low gate-source threshold voltage
• Low gate-drain capacitance
• High power dissipation
• High current handling capability
• High temperature operation
Applications:
• Motor control
• Power management
• DC power supply
• Inverter circuits
• Battery charger circuits
• Switching power supplies
• Voltage regulation
Product Status | Active | |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 14mOhm @ 17A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.8W (Ta), 150W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 5-DFN (5x6) (8-SOFL) | |
Package / Case | ||
Base Product Number |
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NVMFS5113PLT1G Mosfet Transistor High Efficiency Low On Resistance
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