Mosfet Transistor FDMS86350 High-Performance N-Channel MOSFETS
Brand Name:onsemi
Model Number:NVMFS5C670NWFT1G
Minimum Order Quantity:1
Delivery Time:1-7days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Multi-origin
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Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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Product Details
FDMS86350 - N-Channel Automotive MOSFET
The FDMS86350 is an N-channel Power Trench® MOSFET designed for automotive applications. It offers high current capability and low on-resistance. It is designed for use in switching applications such as automotive DC-DC converters, load switches, and inrush current limiters.
Features:
- Low on-resistance
- Low gate charge
- Thermal shutdown protection
- Automotive qualified
- AEC-Q101 qualified
- ESD and latch up protection
Specifications:
- Voltage: -20V
- Drain Current: 25A (TC=25°C)
- Power Dissipation: 83W
- RDS(on): 0.7mΩ
- Operating Temperature: -55°C to +150°C
- Mounting Type: Surface Mount
Product Status | Active | |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 7mOhm @ 11A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 53µA | |
Gate Charge (Qg) (Max) @ Vgs | 14.4 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1035 pF @ 30 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.6W (Ta), 61W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 5-DFN (5x6) (8-SOFL) | |
Package / Case | ||
Base Product Number |
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Mosfet Transistor FDMS86350 High-Performance N-Channel MOSFETS
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