BSC0901NSATMA1Common Power Mosfet Module High Efficiency And Reliability
Brand Name:Infineon Technologies
Model Number:BSC0901NSATMA1
Minimum Order Quantity:1
Delivery Time:1-7days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Multi-origin
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Location:
Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times:
within 38 hours
Product Details
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Product Details
BSC0901NSATMA1 MOSFET Power Electronics
Product Description:
The BSC0901NSATMA1 is a high-performance MOSFET power electronics device designed to provide superior switching performance and power delivery. Built with silicon-on-insulator (SOI) technology, it is ideal for applications such as motor control, digital power, switching power supplies, and solar cell inverters. It offers low gate charge, low on-resistance, high frequency operation, and excellent thermal management.
Product Features:
• High frequency operation
• Low gate charge
• Low on-resistance
• Excellent thermal management
• Silicon-on-insulator (SOI) technology
• Maximum drain-source voltage of 600V
• Maximum peak current of 40A
• Maximum power dissipation of 500W
Product Status | Active | |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 1.9mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | PG-TDSON-8-5 | |
Package / Case | ||
Base Product Number |
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BSC0901NSATMA1Common Power Mosfet Module High Efficiency And Reliability
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