IRFB4019PBF Power Mosfet High Performance Reliable Power Switches

IRFB4019PBF MOSFET Power Electronics

Product Description:

The IRFB4019PBF is a high-performance, silicon-based MOSFET power electronics device from International Rectifier. It is a voltage-controlled insulated-gate bipolar transistor (IGBT) that is designed to provide superior performance in power supply and other power conversion applications. This device is available in a TO-220AC package with an extended thermal pad.

Features:

• Low on-state resistance (RDS(on))
• Low gate charge (Qg)
• Low gate-source capacitance (Ciss)
• Maximum junction temperature (Tjmax) of 175°C
• Maximum drain to source voltage (VDS) of 600V
• Maximum drain current (ID) of 60A
• Operating temperature range from -55°C to 175°C
• Pb-free, RoHS compliant

Application:

The IRFB4019PBF is suitable for use in a wide range of applications such as power supplies, solar power inverters, motor controllers, and other power conversion applications.

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