IRFB7730PBF Power Mosfet High Voltage And High Current Capability
Brand Name:Infineon Technologies
Model Number:IRFB7730PBF
Minimum Order Quantity:1
Delivery Time:1-7days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Multi-origin
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Verified Supplier
Location:
Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times:
within 38 hours
Product Details
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Product Details
IRFB7730PBF MOSFET Power Electronics:
Features:
-100V N-Channel MOSFET
-Typical RDS(on) = 0.052Ohm
-Low gate charge (Qg)
-Low Crss
-AEC-Q101 Qualified
Applications:
-Power Switching
-Battery Protection
-DC-DC Converters
-High Current Load Switching
-High Side Load Switching
-General Purpose Switching
Parameters:
-Drain-Source Voltage: 100V
-Continuous Drain Current: 56A
-Power Dissipation: 0.8W
-Gate-Source Voltage: ±20V
-RDS(on): 0.052Ohm
-Qg Total Gate Charge: 28nC
-Transconductance: 16.2 S
-Input Capacitance: 590pF
-Package/Case: TO-220AB
Product Status | Active | |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 2.6mOhm @ 100A, 10V | |
Vgs(th) (Max) @ Id | 3.7V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 407 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 13660 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 375W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | TO-220AB | |
Package / Case | ||
Base Product Number |
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IRFB7730PBF Power Mosfet High Voltage And High Current Capability
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