IRF2804STRL7PP Mosfet In Power Electronics High Voltage Current High Reliability

Brand Name:Infineon Technologies
Model Number:IRF2804STRL7PP
Minimum Order Quantity:1
Delivery Time:1-7days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Multi-origin
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Verified Supplier
Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
Product Details Company Profile
Product Details

The IRF2804STRL7PP Power MOSFET from Infineon is a high-voltage, ultra-low gate charge MOSFET capable of driving high current loads. It is designed for applications such as motor control, power supplies, and solar inverters.


Features:


- Ultra-low gate charge (Qg)
- Low drain-source on-state resistance (RDS(on))
- High avalanche energy capability
- High current capability
- High voltage capability: 100V
- TO-220AB package


Specifications:


- Part Number: IRF2804STRL7PP
- Drain-Source Voltage: 100V
- Drain Current (ID): 35A
- Gate-Source Voltage (VGS): ±20V
- Maximum Power Dissipation (PD): 106W
- Maximum Drain-Source On-State Resistance (RDS(on)): 0.068Ω
- Maximum Gate Threshold Voltage (VGS(th)): 2.0V
- Maximum Operating Temperature: 150°C
- Mounting Type: Through Hole


Product Status
Active
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 160A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
260 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6930 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
330W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Supplier Device Package
D2PAK (7-Lead)
Package / Case
Base Product Number

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China IRF2804STRL7PP Mosfet In Power Electronics High Voltage Current High Reliability supplier

IRF2804STRL7PP Mosfet In Power Electronics High Voltage Current High Reliability

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