IRFB3004PBF Mosfet In Power Electronics High Efficiency Low Heat Dissipation

Brand Name:Infineon Technologies
Model Number:IRFB3004PBF
Minimum Order Quantity:1
Delivery Time:1-7days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Multi-origin
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Verified Supplier
Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
Product Details Company Profile
Product Details

IRFB3004PBF MOSFET Power Electronics


Product Description:


The IRFB3004PBF is a N-channel MOSFET Power Electronics designed for use in high frequency switch-mode power supplies, general purpose switching and amplifier applications. This MOSFET has a drain-source voltage rating of 100V, a drain current of 30A, and a maximum power dissipation of 4.5W.


Features:


• N-Channel MOSFET
• 100V Drain-Source Voltage Rating
• 30A Drain Current
• 4.5W Maximum Power Dissipation
• Low On-Resistance
• High Speed Switching
• RoHS Compliant


Applications:


• High Frequency Switch-Mode Power Supplies
• General Purpose Switching
• Amplifier Applications


Product Status
Active
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.75mOhm @ 195A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
380W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Supplier Device Package
TO-220AB
Package / Case
Base Product Number

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China IRFB3004PBF Mosfet In Power Electronics High Efficiency Low Heat Dissipation supplier

IRFB3004PBF Mosfet In Power Electronics High Efficiency Low Heat Dissipation

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