IRF8788TRPBF Mosfet In Power Electronics High Voltage And Current Rating

Brand Name:Infineon Technologies
Model Number:IRF8788TRPBF
Minimum Order Quantity:1
Delivery Time:1-7days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Multi-origin
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Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
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Product Details

IRF8788TRPBF MOSFET Power Electronics


Product Description: The IRF8788TRPBF is an advanced MOSFET power electronics device. It is designed to provide superior performance in applications requiring high current and voltage switching. It has a low on-resistance and fast switching speed, making it ideal for high current power management applications.


Features:


• Low on-resistance
• Fast switching speed
• High current capability
• ESD protection (±20kV HBM)
• EMI reduction
• Thermal shutdown protection
• Lead-free, RoHS compliant


Absolute Maximum Ratings:


• Drain Source Voltage (VDS): 100V
• Gate Source Voltage (VGS): ±20V
• Drain Current (ID): 10A
• Power Dissipation (PD): 0.5W
• Operating Temperature Range (TJ): -55 to 150°C
• Storage Temperature Range (Tstg): -55 to 150°C

Package: D2PAK

Manufacturer: Infineon Technologies


Product Status
Active
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 24A, 10V
Vgs(th) (Max) @ Id
2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5720 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
8-SO
Package / Case
Base Product Number

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China IRF8788TRPBF Mosfet In Power Electronics High Voltage And Current Rating supplier

IRF8788TRPBF Mosfet In Power Electronics High Voltage And Current Rating

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