FDC602P MOSFET Power Electronics SuperSOT™-6 Package P-Channel 2.5V Specified Battery Management
Brand Name:onsemi
Model Number:FDC602P
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location:
Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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within 38 hours
Product Details
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Product Details
FDC602P MOSFET Power Electronics
SuperSOT™-6 Package P-Channel 2.5V Specified Battery management
Product Status | Active | |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 35mOhm @ 5.5A, 4.5V | |
Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 1456 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 1.6W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SuperSOT™-6 | |
Package / Case |
General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of
Fairchild’s advanced PowerTrench process. It has been optimized for
power management applications with a wide range of gate drive
voltage (2.5V – 12V).
Applications
· Battery management
· Load switch
· Battery protection Features
· –5.5 A, –20 V RDS(ON) = 35 mW @ VGS = –4.5 V RDS(ON) = 50 mW @ VGS = –2.5 V
· Fast switching speed
· High performance trench technology for extremely low RDS(ON)
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FDC602P MOSFET Power Electronics SuperSOT™-6 Package P-Channel 2.5V Specified Battery Management
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