FCD2250N80Z MOSFET Power Electronics TO-252AA Package N-Channel SuperFET® II MOSFET 800V 2.6A
Brand Name:onsemi
Model Number:FCD2250N80Z
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location:
Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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Product Details
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Product Details
FCD2250N80Z MOSFET Power Electronics
TO-252AA Package N-Channel SuperFET® II MOSFET 800V 2.6A
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 2.25Ohm @ 1.3A, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 260µA | |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 585 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 39W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | TO-252AA | |
Package / Case |
Features
• RDS(on) = 1.8 Typ.)
• Ultra Low Gate Charge (Typ. Qg = 11 nC)
• Low Eoss (Typ. 1.1 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 51 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability Applications
• AC - DC Power Supply • LED Lighting
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate
charge performance. This technology is tailored to minimize
conduction loss, provide superior switching performance, dv/dt rate
and higher avalanche energy. Consequently, SuperFET II MOSFET is
very suitable for the switching power applications such as Audio,
Laptop adapter, Lighting, ATX power and industrial power
applications.
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FCD2250N80Z MOSFET Power Electronics TO-252AA Package N-Channel SuperFET® II MOSFET 800V 2.6A
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