FDS6375 MOSFET Power Electronics 8-SOIC Package P-Channel 2.5V wide range of gate drive voltage
Brand Name:onsemi
Model Number:FDS6375
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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Product Details
FDS6375 MOSFET Power Electronics 8-SOIC Package P-Channel 2.5V wide range of gate drive voltage
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 24mOhm @ 8A, 4.5V | |
Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 2694 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-SOIC | |
Package / Case |
General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench process. It has been
optimized for power management applications with a wide range of
gate drive voltage (2.5V – 8V).
Applications
· Power management
· Load switch
· Battery protection
Features
· –8 A, –20 V. RDS(ON) = 24 mW @ VGS = –4.5 V RDS(ON) = 32 mW @ VGS = –2.5 V
· Low gate charge (26 nC typical)
· High performance trench technology for extremely low RDS(ON)
· High current and power handling capability
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FDS6375 MOSFET Power Electronics 8-SOIC Package P-Channel 2.5V wide range of gate drive voltage
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