FDMC610P MOSFET Power Electronics 8-PowerTDFN Package body diode reverse recovery performance P-Channel
Brand Name:onsemi
Model Number:FDMC610P
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location:
Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times:
within 38 hours
Product Details
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Product Details
FDMC610P MOSFET Power Electronics
8-PowerTDFN Package body diode reverse recovery performance P-Channel
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 3.9mOhm @ 22A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 99 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 6 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.4W (Ta), 48W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | Power33 |
Features
Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A
Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A
State-of-the-art switching performance
Lower output capacitance, gate resistance, and gate charge boost
efficiency
Shielded gate technology reduces switch node ringing and increases
immunity to EMI and cross conduction RoHS Compliant
General Description
This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Applications
High side switching for high end computing
High power density DC-DC synchronous buck converter
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FDMC610P MOSFET Power Electronics 8-PowerTDFN Package body diode reverse recovery performance P-Channel
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