FQT5P10TF MOSFET Power Electronics PackageTO-261-4 energy strength 1.05 Ω Avalanche Tested
Brand Name:onsemi
Model Number:FQT5P10TF
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location:
Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times:
within 38 hours
Product Details
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Product Details
FQT5P10TF MOSFET Power Electronics PackageTO-261-4 energy strength 1.05 Ω Avalanche Tested
ET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 1.05Ohm @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 2W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SOT-223-4 | |
Package / Case |
Features
• -1.0 A, -100 V, RDS(on)=1.05 Ω(Max.) @VGS=-10 V, ID=-0.5 A
• Low Gate Charge (Typ. 6.3 nC)
• Low Crss (Typ. 18 pF)
• 100% Avalanche Tested
description:
This p-channel enhancement mode power mosfet is produced using fairchild semiconductor®’s proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, audio amplifier, dc motor control, and variable switching power application
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FQT5P10TF MOSFET Power Electronics PackageTO-261-4 energy strength 1.05 Ω Avalanche Tested
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