FDT86244 MOSFET Power Electronics High-Speed Switching and High-Power Conversion

Product Listing:

ON Semiconductor FDT86244 Mosfet Power Electronics

Description:

The ON Semiconductor FDT86244 is a high-efficiency, low-power MOSFET power electronics device designed to deliver superior performance in a wide range of applications. It offers a high-speed switching frequency with low gate charge and low on-resistance. It is suitable for high-power applications such as motor control, DC-DC conversion, and power management.

Features:
• Low on-resistance: 0.086mΩ typical
• High-speed switching: 4.5V/ns typical
• Low gate charge: 7nC typical
• Operating temperature range: -55°C to 175°C
• Maximum drain-source voltage: 100V
• Maximum drain current: 100A
• Package: TO-220, TO-220F, TO-247, TO-247AD, TO-252, and D2PAK

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FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	128mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	395 pF @ 75 V
FET Feature	-
Power Dissipation (Max)	2.2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223-4
Package / Case	TO-261-4, TO-261AA