FDPF18N20FT MOSFET Power Electronics – High Performance Switching Low On-Resistance and High Temperature Operation

Brand Name:onsemi
Model Number:FDPF18N20FT
Minimum Order Quantity:1
Delivery Time:1-3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
Product Details Company Profile
Product Details
FDPF18N20FT MOSFET Power Electronics – High Performance Switching Low On-Resistance and High Temperature Operation
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
140mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1180 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
41W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
TO-220F-3
Package / Case

FDPF18N20FT MOSFET Power Electronics from ON Semiconductor

Product Description:

The FDPF18N20FT is a high-speed, power MOSFET from ON Semiconductor. It is designed to provide excellent performance in a wide range of applications, including high frequency switching and power conversion. The device features an integrated PowerTrench MOSFET structure and advanced packaging technology.

Features:

• Low on-resistance
• High speed switching
• Excellent thermal performance
• Robust ESD protection
• Pb-free and RoHS compliant

Specifications:

• Drain-Source Voltage: 20V
• Drain-Source On-Resistance: 0.39Ω
• Gate Charge: 17nC
• Drain-Source Cutoff Voltage: 0.35V
• Gate-Source Voltage: 5.5V
• Maximum Drain Current: 25A
• Maximum Power Dissipation: 200W
• Operating Temperature Range: -55°C to 175°C


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FDPF18N20FT MOSFET Power Electronics – High Performance Switching Low On-Resistance and High Temperature Operation

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