Fairchild FCP190N60-GF102 N-Channel MOSFET Power Electronics Transistor for High-Speed Switching Applications

Brand Name:onsemi
Model Number:FCP190N60-GF102
Minimum Order Quantity:1
Delivery Time:1-3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
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Product Details
Fairchild FCP190N60-GF102 N-Channel MOSFET Power Electronics Transistor for High-Speed Switching Applications
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
199mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2950 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
TO-220-3
Package / Case

OnSemi FCP190N60-GF102 Power MOSFET

Product Description:

The OnSemi FCP190N60-GF102 is a N-Channel power MOSFET with a rated voltage of 60V, a continuous drain current of 190A at 25°C, and a maximum drain-source voltage of 500V. The FCP190N60-GF102 is optimized for maximum efficiency and has a low gate charge of 20 nC typical. It also features an improved RDS(on) performance of 0.012Ω at 25°C, and a high current handling capability of 1.2A. Furthermore, the FCP190N60-GF102 has a maximum operating temperature of 150°C and is suitable for a wide range of applications, such as DC-DC converters, consumer electronics, and automotive applications.

Features:

• Rated Voltage: 60V
• Continuous Drain Current: 190A at 25°C
• Maximum Drain-Source Voltage: 500V
• Gate Charge: 20 nC typical
• RDS(on): 0.012Ω at 25°C
• High Current Handling: 1


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China Fairchild FCP190N60-GF102 N-Channel MOSFET Power Electronics Transistor for High-Speed Switching Applications supplier

Fairchild FCP190N60-GF102 N-Channel MOSFET Power Electronics Transistor for High-Speed Switching Applications

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