NTTFS5D9N08HTWG MOSFET Power Electronics High Quality High Efficiency High Power Switching for Industrial Applications Single N-Channel 80 V, 5.9 m, 84 A

Product Listing:

Product: ON Semiconductor NTTFS5D9N08HTWG MOSFET Power Electronics

Parameters:

• Drain-Source Voltage (Vdss): 60 V
• Gate-Source Voltage (Vgs): ±20 V
• Continuous Drain Current (Id): 8.5 A
• Pulsed Drain Current (Idm): 17 A
• On-Resistance (Rds): 0.09 Ohm
• Rise Time (tr): 5 ns
• Fall Time (tf): 10 ns
• Maximum Junction Temperature (Tj): 175 °C
• Operating Temperature: -55 °C to 175 °C
• Package/Case: TO-252-3, DPAK
• Mounting Type: Surface Mount
• Number of Pins: 3
• Brand: ON Semiconductor
• Transistor Type: MOSFET N-Channel, Metal Oxide
• Transistor Polarity: N-Channel
• Power Dissipation (Pd): 12.5 W

Why buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.

How to buy >>>
• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.

Service >>>
• Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.

Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	5.9mOhm @ 23A, 10V
Vgs(th) (Max) @ Id	4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2040 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	2.7W (Ta), 100W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PQFN (3.3x3.3)
Package / Case	8-PowerWDFN