FDD86250 MOSFET Power Electronics TO-252-3 Transistor for Power Switching and Voltage Regulation
Brand Name:onsemi
Model Number:FDD86250
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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Product Details
FDD86250 MOSFET Power Electronics TO-252-3 Transistor for Power Switching and Voltage Regulation
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 8A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2110 pF @ 75 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.1W (Ta), 132W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | TO-252AA | |
| Package / Case |
The FDD86250 is a three-terminal, N-Channel Power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed to operate in a wide range of power switching applications. It is housed in a TO-252-3 package, making it ideal for use in compact and space-saving electronic systems. This MOSFET features a high blocking voltage rating of 600V and a low on-state resistance of 0.072ohms.
It has a continuous drain current rating of 25A and a maximum pulse current of 78A, making it suitable for high-power switching applications. The FDD86250 also features a fast switching speed for enhanced system efficiency as well as a low gate charge for reduced power consumption. Its advanced design ensures reliable performance in a wide range of operating conditions.
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FDD86250 MOSFET Power Electronics TO-252-3 Transistor for Power Switching and Voltage Regulation
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