FDP032N08B-F102 MOSFET Power Electronics TO-220-3 Package Voltage High Current Applications N-Channel

Brand Name:onsemi
Model Number:FDP032N08B-F102
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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Product Details Company Profile
Product Details
FDP032N08B-F102 MOSFET Power Electronics
TO-220-3 Package Voltage High Current Applications N-Channel

FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
144 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10965 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
263W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Supplier Device Package
TO-220-3
Package / Case

The FDP032N08B-F102 is a N-Channel Power MOSFET from Infineon Technologies. It is designed for use in DC/DC converters, motor control, and other power management applications. This device is available in a TO-220-3 package with three leads. This MOSFET is built using an advanced high-voltage technology.

It operates with a drain-source voltage (VDS) of 80V, an on-state resistance (RDS(on)) of 0.028Ω, and an Id of 82A. It offers a maximum drain current of 82A and a maximum drain-source on-state resistance of 0.028Ω. This MOSFET offers fast switching capabilities and superior avalanche ruggedness. It also provides improved thermal resistance, resulting in improved system efficiency. The FDP032N08B-F102 is RoHS compliant and halogen-free.

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FDP032N08B-F102 MOSFET Power Electronics TO-220-3 Package Voltage High Current Applications N-Channel

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FDP032N08B-F102 MOSFET Power Electronics TO-220-3 Package Voltage High Current Applications N-Channel

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