FDP032N08B-F102 MOSFET Power Electronics TO-220-3 Package Voltage High Current Applications N-Channel
Brand Name:onsemi
Model Number:FDP032N08B-F102
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Shenzhen China
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1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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Product Details
FDP032N08B-F102 MOSFET Power Electronics
TO-220-3 Package Voltage High Current Applications N-Channel
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 144 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 10965 pF @ 40 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 263W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | TO-220-3 | |
| Package / Case |
The FDP032N08B-F102 is a N-Channel Power MOSFET from Infineon Technologies. It is designed for use in DC/DC converters, motor control, and other power management applications. This device is available in a TO-220-3 package with three leads. This MOSFET is built using an advanced high-voltage technology.
It operates with a drain-source voltage (VDS) of 80V, an on-state resistance (RDS(on)) of 0.028Ω, and an Id of 82A. It offers a maximum drain current of 82A and a maximum drain-source on-state resistance of 0.028Ω. This MOSFET offers fast switching capabilities and superior avalanche ruggedness. It also provides improved thermal resistance, resulting in improved system efficiency. The FDP032N08B-F102 is RoHS compliant and halogen-free.
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FDP032N08B-F102 MOSFET Power Electronics TO-220-3 Package Voltage High Current Applications N-Channel
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