NVTR0202PLT1G MOSFET Power Electronics Dual N-Channel Enhancement Mode Field Effect Transistor 20V 2A TO-236-3 Package

Brand Name:onsemi
Model Number:NVTR0202PLT1G
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
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Product Details
NVTR0202PLT1G MOSFET Power Electronics
Dual N-Channel Enhancement Mode Field Effect Transistor 20V 2A TO-236-3 Package

FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
800mOhm @ 200mA, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.18 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
70 pF @ 5 V
FET Feature
-
Power Dissipation (Max)
225mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case

The NVTR0202PLT1G is a P-Channel Enhancement Mode Vertical Field-Effect Transistor (VFET), which is designed specifically for high-frequency, low-voltage applications. This device is constructed using a highly reliable MOSFET process, which provides low on-state resistance and excellent switching performance. The device is housed in a TO-236-3 package and provides a low-voltage operation range of -0.2V to -20V and a low gate-source threshold voltage of -0.5V. It is ideal for high-frequency switching circuits and provides high current handling capability. The device also offers superior power efficiency, low EMI, and minimal power dissipation.


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China NVTR0202PLT1G MOSFET Power Electronics Dual N-Channel Enhancement Mode Field Effect Transistor 20V 2A TO-236-3 Package supplier

NVTR0202PLT1G MOSFET Power Electronics Dual N-Channel Enhancement Mode Field Effect Transistor 20V 2A TO-236-3 Package

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