FDB110N15A MOSFET Power Electronics TO-263-3 Transistor High Performance Switching Amplification

Brand Name:onsemi
Model Number:FDB110N15A
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
Product Details Company Profile
Product Details
FDB110N15A MOSFET Power Electronics
TO-263-3 Transistor High Performance Switching Amplification

FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11mOhm @ 92A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4510 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
234W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Supplier Device Package
D²PAK (TO-263)
Package / Case



The FDB110N15A is a N-channel MOSFET power electronic device manufactured by Fairchild Semiconductor. This device is housed in a TO-263-3 package, which is a small surface-mountable package that provides low-profile, enhanced thermal performance.


The FDB110N15A is designed to deliver high power in a compact package. It features a low on-resistance which enables low conduction losses, and a low gate charge which reduces switching losses. Additionally, this device is designed to provide fast switching speeds and low gate charge for efficient switch operation.


The FDB110N15A is ideal for use in a variety of applications such as DC/DC converters, power factor correction, motor control, lighting control, and other high-power applications. This device is RoHS compliant and meets UL and CSA safety standards for reliable operation.


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China FDB110N15A MOSFET Power Electronics TO-263-3 Transistor High Performance Switching Amplification supplier

FDB110N15A MOSFET Power Electronics TO-263-3 Transistor High Performance Switching Amplification

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