NVTA7002NT1G MOSFET Power Electronics N-Channel Enhancement Mode SC-75 600V 4.3A 17.3mΩ RDS
Brand Name:onsemi
Model Number:NVTA7002NT1G
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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within 38 hours
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Product Details
NVTA7002NT1G MOSFET Power Electronics
N-Channel Enhancement Mode SC-75 600V 4.3A 17.3mΩ RDS
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 7Ohm @ 154mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA | |
| Vgs (Max) | ±10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 20 pF @ 5 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 300mW (Tj) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | SC-75, SOT-416 | |
| Package / Case | | |
| Base Product Number |
NVTA7002NT1G is a dual N-channel MOSFET (metal-oxide-semiconductor field effect transistor) from ON Semiconductor. It is a very low on-resistance, low gate charge, low gate-source charge Power MOSFET in a small SC-75 package. It has a drain-source voltage rating of 60V and a maximum drain current of 0.7A. It is ideal for use in high speed switching applications and provides excellent switching performance. It has an ultra-low on-resistance of 0.00045 ohms and a low gate charge of 5.2nC. The MOSFET is RoHS compliant and is suitable for a wide range of applications including power management, audio amplifiers and battery management systems.
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NVTA7002NT1G MOSFET Power Electronics N-Channel Enhancement Mode SC-75 600V 4.3A 17.3mΩ RDS
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