FDMC86520L MOSFET Power Electronics High Quality Advanced Features Optimal Performance
Brand Name:onsemi
Model Number:FDMC86520L
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location:
Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times:
within 38 hours
Product Details
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Product Details
FDMC86520L MOSFET Power Electronics High Quality Advanced Features Optimal Performance
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 7.9mOhm @ 13.5A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4550 pF @ 30 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.3W (Ta), 40W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-MLP (3.3x3.3) | |
Package / Case |
The FDMC86520L is a high performance N-channel MOSFET power electronic device designed to provide maximum reliability and efficiency in a wide range of applications. This device features an advanced low-voltage trench structure and a low on-state resistance to increase efficiency and power dissipation. Its low gate charge and low threshold voltage make it ideal for high frequency applications.
The device is available in a small form factor package, making it ideal for space-constrained applications. It is also RoHS-compliant and features a high temperature rating for increased reliability. This device is suitable for use in a variety of applications, including switching power supplies, high-efficiency DC-DC converters, and motor control.
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FDMC86520L MOSFET Power Electronics High Quality Advanced Features Optimal Performance
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