FDMS86101 MOSFET Power Electronics High Performance Highly Reliable Semiconductor Device Advanced Package Technology
Brand Name:onsemi
Model Number:FDMS86101
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Shenzhen China
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1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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within 38 hours
Product Details
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Product Details
FDMS86101 MOSFET Power Electronics
High Performance Highly Reliable Semiconductor Device Advanced Package Technology
| Product Status | Active | |
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 13A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.5W (Ta), 104W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | 8-PQFN (5x6) | |
| Package / Case |
The FDMS86101 is a N-Channel Power MOSFET designed for use in high power switching applications. It is built using the latest Power MOSFET process technology, providing low on-state resistance, high switching speed and high temperature operating capability. The FDMS86101 is housed in a low profile package, making it a suitable choice for space constrained applications. The MOSFET features low input capacitance, making it suitable for high frequency switching applications. With its rugged construction and low gate charge, the FDMS86101 is an ideal choice for applications such as high power DC-DC converters, high power battery operated systems, and high power motor control systems.
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FDMS86101 MOSFET Power Electronics High Performance Highly Reliable Semiconductor Device Advanced Package Technology
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