NTNS3164NZT5G MOSFET Power Electronics SOT-883 High Performance High Reliability Applications

Brand Name:onsemi
Model Number:NTNS3164NZT5G
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
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Product Details

NTNS3164NZT5G MOSFET Power Electronics

SOT-883 High Performance High Reliability Applications


FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
700mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
24 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
155mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
SOT-883 (XDFN3) (1x0.6)
Package / Case



The NTNS3164NZT5G is a P-Channel enhancement mode transistor in SOT-883 (SC-88) package. It is designed for use in high-side switching applications where low side gate drive is not possible. This device features an on-resistance of 4.3 ohms, an RDS(ON) of 8.3mΩ, a maximum continuous drain current of -12A, and a maximum pulse current of -20A. It has excellent thermal performance, with a maximum junction temperature of 175 °C and a low gate charge of 17nC. This device is suitable for applications such as DC-DC converters, motor control, and portable electronics.


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China NTNS3164NZT5G MOSFET Power Electronics SOT-883 High Performance High Reliability Applications supplier

NTNS3164NZT5G MOSFET Power Electronics SOT-883 High Performance High Reliability Applications

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