NTR5198NLT1G MOSFET Power Electronics TO-236-3 Package Transistor High Performance Applications
Brand Name:onsemi
Model Number:NTR5198NLT1G
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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Product Details
NTR5198NLT1G MOSFET Power Electronics
TO-236-3 Package Transistor High Performance Applications
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 4.5 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 182 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 900mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Package / Case |
This NTR5198NLT1G MOSFET Power Electronics is a 3-pin TO-236-3 package. It offers high efficiency and low on-resistance while operating at a low voltage. It is suitable for applications such as power switches, motor drivers and solenoid drivers. This device has a high breakdown voltage of 30V, which provides a higher level of protection for the system. It also has an optimized gate charge for reduced conduction loss and improved switching performance. The device is an N-channel MOSFET optimized for low voltage switching applications. It is RoHS compliant and is offered in a lead free package. This device is ideal for high frequency switching and can operate at frequencies up to 10MHz.
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NTR5198NLT1G MOSFET Power Electronics TO-236-3 Package Transistor High Performance Applications
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