SIR882ADP-T1-GE3
Category:Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:-
Vgs(th) (Max) @ Id:2.8V @ 250µA
Operating Temperature:-55°C ~ 150°C (TJ)
Package / Case:PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
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N-Channel 100 V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount
PowerPAK® SO-8
SIR882ADP-T1-GE3
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