BSZ086P03NS3EGATMA1
Category:Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:-
Vgs(th) (Max) @ Id:3.1V @ 105µA
Operating Temperature:-55°C ~ 150°C (TJ)
Package / Case:8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:57.5 nC @ 10 V
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P-Channel 30 V 13.5A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface
Mount PG-TSDSON-8
BSZ086P03NS3EGATMA1
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