IS41LV16100B-50KL IC DRAM 16MBIT PARALLEL 42SOJ ISSI, Integrated Silicon Solution Inc
Brand Name:ISSI, Integrated Silicon Solution Inc
Model Number:IS41LV16100B-50KL
Minimum Order Quantity:1
Delivery Time:3-5 work days
Payment Terms:T/T
Price:Based on current price
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Location:
Shenzhen China
Address:
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Supplier`s last login times:
within 26 hours
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DESCRIPTION
TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.FEATURES
• TTL compatible inputs and outputs; tristate I/O• Refresh Interval:
— Auto refresh Mode: 1,024 cycles /16 ms
— RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial Temperature Range: -40oC to +85oC
• Lead-free available
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | ISSI |
| Product Category | IC Chips |
| Series | - |
| Packaging | Tube |
| Package-Case | 42-BSOJ (0.400", 10.16mm) |
| Operating-Temperature | 0°C ~ 70°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 3 V ~ 3.6 V |
| Supplier-Device-Package | 42-SOJ |
| Memory Capacity | 16M (1M x 16) |
| Memory-Type | DRAM - EDO |
| Speed | 50ns |
| Format-Memory | RAM |
Descriptions
DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25ns 42-SOJ
IS41LV16100B-50KL IC DRAM 16MBIT PARALLEL 42SOJ ISSI, Integrated Silicon Solution Inc
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