MT28F004B3VG-8 B IC FLASH 4MBIT PARALLEL 40TSOP I Micron Technology Inc.

Brand Name:Micron Technology Inc.
Model Number:MT28F004B3VG-8 B
Minimum Order Quantity:1
Delivery Time:3-5 work days
Payment Terms:T/T
Price:Based on current price
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Location: Shenzhen China
Address: No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
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Product Details

Product Details


GENERAL DESCRIPTION

The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5V VPP voltage, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process.
The MT28F004B3 and MT28F400B3 are organized into seven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. Writing or erasing the boot block requires either applying a super-voltage to the RP# pin or driving WP# HIGH in addition to executing the normal write or erase sequences. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures.

FEATURES

• Seven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Four main memory blocks
• Smart 3 technology (B3):
3.3V ±0.3V VCC
3.3V ±0.3V VPP application programming
5V ±10% VPP application/production programming1
• Compatible with 0.3µm Smart 3 device
• Advanced 0.18µm CMOS floating-gate process
• Address access time: 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
(MT28F400B3, 256K x 16/512K x 8)
• Byte-wide READ and WRITE only
(MT28F004B3, 512K x 8)
• TSOP and SOP packaging options

Specifications

AttributeAttribute Value
ManufacturerMicron Technology Inc.
Product CategoryMemory ICs
Series-
PackagingTray
Package-Case40-TFSOP (0.724", 18.40mm Width)
Operating-Temperature0°C ~ 70°C (TA)
InterfaceParallel
Voltage-Supply3 V ~ 3.6 V
Supplier-Device-Package40-TSOP I
Memory Capacity4M (512K x 8)
Memory-TypeFLASH - NOR
Speed80ns
Format-MemoryFLASH

Descriptions

FLASH - NOR Memory IC 4Mb (512K x 8) Parallel 80ns 40-TSOP I
China MT28F004B3VG-8 B IC FLASH 4MBIT PARALLEL 40TSOP I Micron Technology Inc. supplier

MT28F004B3VG-8 B IC FLASH 4MBIT PARALLEL 40TSOP I Micron Technology Inc.

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