IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds

Brand Name:IXYS
Model Number:IXFN38N100Q2
Minimum Order Quantity:1pcs
Delivery Time:1day
Payment Terms:T/T, Western Union
Place of Origin:USA
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Location: Shenzhen Guangdong China
Address: Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China
Supplier`s last login times: within 1 hours
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Product Details

IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds

IXYS
Product Category:Discrete Semiconductor Modules
RoHS:Details
Power MOSFET Modules
Si
- 30 V, + 30 V
Chassis Mount
SOT-227-4
- 55 C
+ 150 C
IXFN38N100
Tube
Brand:IXYS
Configuration:Single
Fall Time:15 ns
Height:9.6 mm
Id - Continuous Drain Current:38 A
Length:38.23 mm
Number of Channels:1 Channel
Pd - Power Dissipation:890 W
Product Type:Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:250 mOhms
Rise Time:28 ns
Subcategory:Discrete Semiconductor Modules
Tradename:HiPerFET
Transistor Polarity:N-Channel
Typical Turn-Off Delay Time:57 ns
Typical Turn-On Delay Time:25 ns
Vds - Drain-Source Breakdown Voltage:1 kV
Width:25.42 mm
Unit Weight:1.058219 oz



Wisdtech Technology Co.,Limited
Tel: +86-755-23606019
Address: Room 1205-1207,Nanguang building,Huafu Road,
Futian District,Shenzhen,Guangdong,China

Laneya
Telephone:+86-13420902155
E-mail:sales@wisdtech.com.cn
Wechat:laneyatao66
WhatsApp:+8613420902155
Skype:sales@wisdtech.com.cn


China IXFN38N100Q2  Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds supplier

IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds

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