Thermal Conductive Aluminum Nitride Sheet AlN Ceramic Aluminum Nitride Plate
Brand Name:Rongsheng Xinwei
Certification:ISO9001
Model Number:Rongsheng
Minimum Order Quantity:100 Pieces
Delivery Time:20-30DAYS
Payment Terms:TT; L/C
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Zhengzhou Henan China
Address:
11th Floors, Building 6, China Central Electronic Commerce Port, Daxue Road, Zhengzhou, Henan, China
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Description of High Quality Thermal Conductive AlN Ceramic Aluminum
Nitride Plate
Aluminum nitride (AlN) ceramic is a high-performance material that
combines high thermal conductivity with high electrical
resistivity. It is a covalently-bonded ceramic, meaning that the
atoms are held together by strong covalent bonds. This gives AlN
ceramic its unique properties, including:
High thermal conductivity: AlN ceramic has a thermal conductivity
of up to 321 W/mK, which is higher than many metals. This makes it
an ideal material for heat dissipation applications.
High electrical resistivity: AlN ceramic is an excellent electrical
insulator. This makes it ideal for use in electrical and electronic
applications.
Low thermal expansion: AlN ceramic has a low coefficient of thermal
expansion, meaning that it expands and contracts very little with
changes in temperature. This makes it a good choice for
applications where dimensional stability is important.
Good metallization capacity: AlN ceramic can be easily metallized,
which makes it compatible with a variety of manufacturing
processes.
Application of High Quality Thermal Conductive AlN Ceramic Aluminum Nitride Plate
(1) Aluminum nitride ceramic substrate, with high thermal conductivity, low expansion coefficient, high strength, high temperature resistance, chemical corrosion resistance, high resistivity and low dielectric loss, is an ideal heat dissipation substrate and packaging material for large-scale integrated circuits.
(1) Aluminum nitride ceramic substrate, with high thermal conductivity, low expansion coefficient, high strength, high temperature resistance, chemical corrosion resistance, high resistivity and low dielectric loss, is an ideal heat dissipation substrate and packaging material for large-scale integrated circuits.
(2) Aluminum nitride is a new wear-resistant ceramic material with
high hardness, which is superior to traditional aluminum oxide. It
is used for parts with severe wear.
(3) Using the heat resistance, melt erosion resistance and thermal
shock resistance of AIN ceramics, GaAs crystal crucibles, Al
evaporating dishes, magnetohydrodynamic power generation devices
and corrosion resistant parts of high-temperature turbines can be
made, and their optical properties can be used as infrared windows.
AlN thin films can be made into high-frequency piezoelectric
components, VLSI substrates, etc.
(4) Aluminum nitride is heat-resistant, resistant to corrosion of
molten metal, and stable to acid. When the new surface of AIN is
exposed to humid air, it will react to form an extremely thin oxide
film, which can be used as the crucible for smelting aluminum,
copper, silver, lead and other metals, and as the sintering and
casting die material.
Parameter of AlN Ceramic Aluminum Nitride Plate
| Item | Unit | Property Index | ||
| AN170 | AN200 | AN220 | ||
| Color | - | Gray | Gray | Beige |
| Water Absorption | % | 0 | 0 | 0 |
| Volume Density | g/cm3 | ≥3.3 | ≥3.3 | ≥3.26 |
| Surface Roughness | Um | 0.1-0.6 | 0.1-0.6 | 0.1-0.6 |
| Camber | Length‰ | ≤2 | ≤2 | ≤2 |
| Thermal Conductivity(20℃) | W/m.k | ≥170 | ≥200 | ≥220 |
| Coefficient of thermal expansion | 20℃~300℃(*10-6/℃) | 4.6 | 4.6 | 4.5 |
| 40℃~800℃(*10-6/℃) | 5.2 | 5.2 | 5.2 | |
| Bending Strength | Mpa | ≥450 | ≥300 | ≥200 |
| Modulus Strength | Gpa | 320 | 310 | 310 |
| Moh’s hardness | - | 8 | 8 | 8 |
| Dielectric Strength | KV/mm | ≥17 | ≥16 | ≥15 |
| Volume Resistivity | Ω.cm | ≥1014 | ≥1014 | ≥1013 |
| Dielectric constant | - | 9 | 8.6 | 8.5 |
| Dielectric Loss | X10-4 | 2.98 | 2 | 2 |
Thermal Conductive Aluminum Nitride Sheet AlN Ceramic Aluminum Nitride Plate
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