HT Sensor HT-IQT-B Diffused Silicon Pressure Sensor For High Temperature Measurement

Brand Name:HT SENSOR
Certification:ISO9001
Model Number:HT-IQT-B
Minimum Order Quantity:1
Delivery Time:5-8 work days
Payment Terms:Western Union, L/C, T/T
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Location: Baoji Shaanxi China
Address: Building 4, No.195, Gaoxin Avenue, Weibin District, Baoji City, Shaanxi Province, China
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HT Sensor HT-IQT-B Diffused Silicon Pressure Sensor for High Temperature Measurement

HT-IQT-B Piezoresistive Silicon Pressure Sensor

Introduction of diffused silicon pressure sensor:


HT - IQT - B silicon pressure sensor is a kind of embedded diaphragm.Pressure was transferred to the sensitive chip through a stainless steel diaphragm and sealed silicone oil. The sensor chip converts the pressure into a detectable millivolt electrical signal. Thus, we can intuitively observe the pressure value of the measured medium. This product adopts plate diaphragm structure, with high temperature heat sink, high temperature medium measurement effect is good. The bare flat diaphragm is easy to clean and has a good effect on the measurement of viscous media.Apply to food, health and other industries.



Electrical performance of diffused silicon pressure sensor:
  1. Power Supply: ≤2mA DC (0.4-1.5mA DC).
  2. Input Impedance : 2.5KΩ~6KΩ.
  3. Output Impedance: 2.5KΩ~6KΩ.
  4. Electrical Connection: Gold-plated Kovar pins or 100mm high-temperature wires.
Performance Parameters of diffused silicon pressure sensor:
Measurement RangeGauge(G)35KPa,100KPa,200KPa,350KPa,1000KPa,2000Kpa
Absolute(A)100KPaA,200KPaA,350KPaA,700KPaA,1000KPaA,2000KPaA
Sealed(S)3500KPaS
TypMaxUnit
NonLinearity±0.15±0.3%F.S
Repeatability0.050.1%F.S
Hysteresis0.050.1%F.S
Zero Offset Output0±10±2mV
Full Scale Output≤20KPa50±1050±30mV
≥35kPa100±10100±30mV
Zero Offset Temp. Drift≤20KPa±1±2%F.S
≥35kPa±0.5±1%F.S
Full Scale Temp. Drift≤20KPa±1±2%F.S
≥35kPa±0.5±1%F.S
Compensated Temp.≤20KPa0~50ºC
≥35kPa0~70ºC
Operating Temperature-20~80ºC
Storage Temperature-40~125ºC
Burst Pressure5X the full scale
Long-term Stability0.2 %F.S/Year
Diaphragm Material316L
Insulation Resistance≥200MΩ 100VDC
Shock100g,11ms
Response Time≤1ms
O-ring SealNitrile rubber or Fluoro rubber
Filling MediumSilicon Oil
Weight~220g
The parameters are tested under the following conditions: 1.5mA @25°C
Outline Construction
Dimension



Electrical connection and compensation

Selection Examples
Ordering tips
1. Pay attention to the fit between the core size and the transmitter housing during assembly to achieve the required airtightness.
2. During the assembly of the housing, ensure it is aligned vertically and apply even pressure to avoid jamming or damaging the compensation plate.
3. If the measured medium is not compatible with the core diaphragm and the housing material (316L), special instructions should be provided when placing the order.
4. Avoid pressing the sensor diaphragm with hands or sharp objects to prevent damage to the core due to diaphragm deformation or piercing.
5. Keep the pressure port of the gauge pressure core open to the atmosphere and prevent the entry of water, water vapor, or corrosive media into the core negative pressure chamber.
6. If there are any changes to the pin leads, follow the label on the actual core for reference.

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HT Sensor HT-IQT-B Diffused Silicon Pressure Sensor For High Temperature Measurement

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