20V Repetitive Peak Reverse Voltage SS12A Schottky Barrier Diode SMA Package
Brand Name:SOCAY
Certification:REACH,RoHS,ISO
Model Number:SS12A
Minimum Order Quantity:5000PCS
Delivery Time:5-8 work days
Place of Origin:Shenzhen, Guangdong, China
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Shenzhen Guangdong China
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4/F, Block C, HeHengXing Science & Technology Park, 19 MinQing Road, LongHua District, Shenzhen City, GuangDong Province, China
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within 40 hours
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20V Repetitive Peak Reverse Voltage SS12A Schottky Barrier Diode SMA Package
Schottky Barrier Diode DATASHEET: SS12A~SS120A(SMA)_v2211.1.pdf
Schottky Barrier Diode Features:
- Low profile package
- Ideal for automated placement
- Ultrafast reverse recovery time
- Low power losses, high efficiency
- Low forward voltage drop
- High surge capability
- High temperature soldering:
260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC
Schottky Barrier Diode Mechanical Data:
- Case: JEDEC DO-214AC molded plastic
- Terminals: Solder plated, solderable per J-STD-002B and JESD22-B102D
Polarity: Laser band denotes cathode end
Schottky Barrier Diode Major Ratings and Characteristics:
| IF(AV) | 1.0A |
| VRRM | 20 V to 200 V |
| IFSM | 40A |
| VF | 0.50V, 0.55V, 0.70V, 0.85V,0.95V |
| Tj max. | 125℃ |
Schottky Barrier Diode Maximum Ratings & Thermal Characteristics (TA = 25℃ unless otherwise noted):
| Items | Symbol | SS12A | SS13A | SS14A | SS15A | SS16A | SS18A | SS110A | SS115A | SS120A | Unit |
Maximum repetitive peak reverse voltage | VRRM | 20 | 30 | 40 | 50 | 60 | 80 | 100 | 150 | 200 | V |
| Maximum RMS voltage | VRMS | 14 | 21 | 28 | 35 | 42 | 56 | 70 | 105 | 140 | V |
Maximum DC blocking voltage | VDC | 20 | 30 | 40 | 50 | 60 | 80 | 100 | 150 | 200 | V |
Maximum average forward rectified current | IF(AV) | 1 | A | ||||||||
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load | IFSM | 40 | A | ||||||||
Voltage rate of change (rated VR) | dv/dt | 10000 | V/μs | ||||||||
Thermal resistance from junction to lead (1) | RθJL | 35 | ℃/W | ||||||||
Operating junction and storage temperature range | TJ,TSTG | –65 to +125 | ℃ | ||||||||
| Note 1: Mounted on P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas. | |||||||||||
Schottky Barrier Diode Electrical Characteristics (TA = 25℃ unless otherwise noted):
| Items | Test conditions | Symbol | SS12A | SS13A~ SS14A | SS15A~ SS16A | SS18A~ SS110A | SS115A~ SS120A | Unit | |
| Instantaneous forward voltage | IF=1.0A(2) | VF | 0.50 | 0.55 | 0.70 | 0.85 | 0.95 | V | |
| Reverse current | VR=VDC | Tj=25℃ | IR | 0.5 | mA | ||||
| Tj=100℃ | 5.0 | ||||||||
| Note 2: Pulse test:300μs pulse width,1% duty cycle. | |||||||||
Schottky Barrier Diode SS12A Diode Dimensions:
Schottky Barrier Diode SS12A Notice:
- Product is intended for use in general electronics applications.
- Product should be worked less than the ratings; if exceeded, may cause permanent damage,or introduce latent failure mechanisms.
- The absolute maximum ratings are rated values and must not be exceeded during operation. The following are the general derating methods you design a circuit with a device.
IF(AV) : We recommend that the worst case current be no greater than 80% .
IFSM : This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, which the general during the lifespan of the device.
TJ : Derate this rating when using a device in order to ensure high reliability. We recommend that the device be used at a TJ of below 100℃.
20V Repetitive Peak Reverse Voltage SS12A Schottky Barrier Diode SMA Package
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