Low Switching Losses Infineon Discrete IGBT Transistor Module OEM
Model Number:SPS40G12E3S
Collector Emitter Capacitance:170 pF
Configuration:Single
Current Collector Continuous:50 A
Current Collector Pulsed:200 A
Gate Charge:80 nC
Contact Now
Add to Cart
Verified Supplier
Location:
Wuxi Jiangsu China
Address:
Building 36, Tianan Smart City, No. 228 Linghu Avenue, Xinwu District, Wuxi City, Jiangsu Province
Supplier`s last login times:
within 38 hours
Shipping
lt's easy to get a shipping quote! Just click the button below and complete the short form.
Get Shipping Quote
Product Details
Company Profile
Product Details
Solid Power-DS-SPS40G12E3S-S03010001 V1.0
1200V 40A IGBT Discrete
1200V 40A IGBT
General Description
SOLIDPOWER IGBT Discrete provides low switching losses as well as high RBSOA capability. They are designed for the applications such as industrial UPS, charger, Energy storage, Three-level solar string inverter, welding etc.
Features:
▪ 1200V Trench Field Stop technology
▪ SiC SBD Freewheeling Diodes
▪ Low switching losses
▪ Low gate charge
Typical Applications:
▪ Industrial UPS
▪ Charger
▪ Energy storage
▪ Inverter
▪ Welding
IGBT IGBT
Output characteristic IGBT Output characteristic IGBT
IC=f(VCE),Tvj=25°C IC=f(VCE) , Tvj=175°C
FRD IGBT
Output characteristic FRD Collector-emitter saturation voltage IGBT
IF=f(VF) VCE(sat)=f (Tj)
FRD IGBT
Collector-emitter saturation voltage FRD Gate-emitter threshold voltage IGBT
VF=f (Tj) VGE(th) =f (Tj)
FRD IGBT
Output characteristic FRD Collector Current IGBT
IF=f(VF) IC=f(TC)
VGE≥15V,Tvj≤175°C
Gate Charge Characteristics Capacitance Characteristic
VGE(th) =f (Qg) VCE=25V, VGE=0V, f=1MHZ
VGE =15V, IC=40A
IGBT IGBT
Switching Time IGBT Switching Time IGBT
ts=f (IC), Tvj=25°C ts=f (IC), Tvj=175°C
IGBT IGBT
Switching Time IGBT Switching Time IGBT
ts=f (RG), Tvj=25°C ts=f (RG), Tvj=175°C
VGE=15V, VCE=600V, IC=40A VGE=15V, VCE=600V, IC=40A
IGBT IGBT
Switching Time IGBT Switching losses IGBT
ts=f (Tj) E=f (Tj)
VGE=15V, VCE=600V, RG=12Ω, IC=40A VGE=15V, VCE=600V, RG=12Ω, IC=40A
IGBT IGBT
Switching losses IGBT Switching losses IGBT
E=f ( IC) E=f ( IC)
VGE=15V, VCE=600V, RG=12Ω, Tvj=25°C VGE=15V, VCE=600V, RG=12Ω, Tvj=175°C
IGBT IGBT
Switching losses IGBT Switching losses IGBT
E=f (RG) E=f (RG)
VGE=15V, VCE=600V, IC=40A, Tvj=25°C VGE=15V, VCE=600V, IC=40A, Tvj=175°C
IGBT IGBT
Switching losses IGBT Switching losses IGBT
E=f (VCE), Tvj=25°C E=f (VCE), Tvj=175°C
VGE=15V, RG=12Ω, IC=40A VGE=15V, RG=12Ω, IC=40A
IGBT
Forward Bias SOA Transient thermal impedance IGBT
TC=25°C , VGE=15V, Tvj≤175°C ZthJA=f (t)
This is a discrete Insulated Gate Bipolar Transistor (IGBT) with a voltage rating of 1200V and a current rating of 40A. IGBTs are commonly used in power electronic applications for switching high voltages and currents. The specifications indicate that this particular IGBT can handle a maximum voltage of 1200V and a maximum current of 40A. In practical applications, appropriate drive circuitry and heat dissipation considerations are important for ensuring the reliability and performance of the IGBT.
Circuit diagram headline
Package outlines
Low Switching Losses Infineon Discrete IGBT Transistor Module OEM
Inquiry Cart
0