200A 1200V IGBT Half Bridge Module 62mm DS-SPS200B12G6H4-S04020005

IGBT, Inverter / IGBT,逆变器

Maximum Rated Values / 最大额定值

Item

Symbol

Conditions

Value

Units

集电极－发射极电压

Collector-emitter voltage

VCES

Tvj=25°C

1200

V

连续集电极直流电流

Continuous DC collector current

IC

TC = 100°C, Tvj max= 175°C

TC = 25°C, Tvj max= 175°C

200

280

A

A

集电极重复峰值电流

Peak repetitive collector current

ICRM

tp=1ms

400

A

总功率损耗

Total power dissipation

Ptot

TC=25°C, Tvj=175°C

1070

W

栅极－发射极峰值电压

Maximum gate-emitter voltage

VGES

±20

V

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

集电极－发射极饱和电压

Collector-emitter saturation voltage

VCE(sat)

IC=200A,VGE=15V

Tvj=25°C Tvj=125°C Tvj=150°C

1.50

2.40

2.95

3.00

3.00

V

V

V

栅极阈值电压

Gate threshold voltage

VGE(th)

IC=8mA, VCE=VGE, Tvj=25°C

5.0 6.0 7.0

V

栅极电荷

Gate charge

QG

VGE=-15V…+15V

0.8

µC

内部栅极电阻

Internal gate resistor

RGint

Tvj=25°C

2.5

Ω

输入电容

Input capacitance

Cies

f=1MHz, Tvj=25°C, VCE=25V, VGE=0V

8.76

nF

反向传输电容

Reverse transfer capacitance

Cres

f=1MHz, Tvj=25°C, VCE=25V, VGE=0V

0.40

nF

集电极-发射极截止电流

Collector-emitter cut-off current

ICES

VCE=1200V, VGE=0V, Tvj=25°C

5.00

mA

栅极-发射极漏电流

Gate-emitter leakage current

IGES

VCE=0V, VGE=20V, Tvj=25°C

200

nA

开通延迟时间(电感负载)

Turn-on delay time, inductive load

td( on)

Tvj=25°C Tvj=125°C Tvj=150°C

65

75

75

ns

ns

ns

上升时间(电感负载)

Rise time, inductive load

tr

Tvj=25°C Tvj=125°C Tvj=150°C

45

55

55

ns

ns

ns

关断延迟时间(电感负载)

Turn-off delay time, inductive load

td(off)

IC=200A, VCE=600V

VGE=±15V

RGon=3.3 Ω

RGoff=3.3 Ω

Inductive Load

Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C

205

230

235

ns

ns

ns

下降时间(电感负载)

Fall time, inductive load

tf

55

85

85

ns

ns

ns

开通损耗能量(每脉冲)

Turn-on energy loss per pulse

Eon

Tvj=25°C Tvj=125°C Tvj=150°C

16.7

26.4

28.2

mJ

mJ

mJ

关断损耗能量(每脉冲)

Turn-off energy loss per pulse

Eoff

Tvj=25°C Tvj=125°C Tvj=150°C

4.9

8.8

9.6

mJ

mJ

mJ

短路数据

SC data

ISC

VGE≤15V, VCC=800V

VCEmax=VCES-LsCE·di/dt, tp=10µs, Tvj=150°C

800

A

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per IGBT / 每个 IGBT

0.14

K/W

工作温度

Temperature under switching conditions

Tvjop

-40

150

°C

Diode, Inverter / 二极管,逆变器

Maximum Rated Values /最大额定值

Item

Symbol Conditions

Value

Units

反向重复峰值电压

Peak repetitive reverse voltage

VRRM Tvj=25°C

1200

V

连续正向直流电流

Continuous DC forward current

IF

200

A

正向重复峰值电流

Peak repetitive forward current

IFRM tp=1ms

400

A

Characteristic Values / 特征值

Item

Symbol Conditions

Min. Typ.

Max.

Units

正向电压

Forward voltage

VF IF=200A

Tvj=25°C Tvj=125°C Tvj=150°C

1.50

1.80

1.80

1.80

2.40

V

V

V

反向恢复峰值电流

Peak reverse recovery current

IRM

Qr

Erec

IF=200A

-di/dt=3200A/µs VR = 600V

VGE=-15V

Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C

140

140

140

A

A

A

反向恢复电荷

Recovery charge

14.5

22.5 28.0

µC

µC

µC

反向恢复损耗(每脉冲)

Reverse recovery energy (per pulse)

4.5

8.7 9.9

mJ

mJ

mJ

结－外壳热阻

Thermal resistance, junction to case

RthJC Per diode / 每个二极管

0.23

K/W

工作温度

Temperature under switching conditions

Tvjop

-40

150

°C

Module / 模块

Item

Symbol

Conditions

Value

Units

绝缘测试电压

Isolation test voltage

VISOL

RMS, f=50Hz, t=1min

3.0

kV

模块基板材料

Material of module baseplate

Cu

内部绝缘

Internal isolation

基本绝缘 (class 1, IEC 61140)

Basic insulation (class 1, IEC 61140)

Al2O3

爬电距离

Creepage distance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

29.0

23.0

mm

电气间隙

Clearance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

23.0

11.0

mm

相对电痕指数

Comperative tracking index

CTI

>400

Item

Symbol

Conditions

Min.

Typ.

Max.

Units

杂散电感,模块

Stray inductance module

LsCE

20

nH

模块引脚电阻, 端子-芯片

Module Lead Resistance ,Terminals-Chip

RCC’+EE’

RAA’+CC’

0.7

mΩ

储存温度

Storage temperature

Tstg

-40

125

°C

模块安装的安装扭距

Mounting torque for module mounting

M

M6

3.00

6.00

Nm

端子联接扭距

Terminal connection torque

M

M6

2.50

5.00

Nm

重量

Weight

G

320

g