1600V 240A IGBT Modules EconoPack 3 Phase Chopper Module Half Controlled-Solid Power-DS-SPS240RC16K3-S04030012 V1.0

Item

Symbol

Conditions

Value

Units

反向重复峰值电压

Peak repetitive reverse voltage

VRRM

Tvj=25°C, IR=0.1mA

1600

V

最大正向均方根电流(每芯片)

Maximum RMS forward current per chip

IFRMSM

TC=80°C, Tvj=150°C

170

A

最大整流器输出均方根电流

Maximum RMS current at rectifier output

IRMSM

TC=80°C

240

A

正向浪涌电流

Surge forward current

IFSM

tp=10ms, Tvj=25°C

tp=10ms, Tvj=150°C

1440

1200

A

A

I2t-值

I²t-value

I2t

tp=10ms, Tvj=25°C

tp=10ms, Tvj=150°C

10368

7200

A2s

Characteristic Values

Item

Symbol

Conditions

Min. Typ. Max.

Units

正向电压

Forward voltage

VF

Tvj=25°C, IF=170A

Tvj=150°C, IF=170A

1.10

1.00

1.30

V

V

阈值电压

Threshold voltage

VTO

Tvj=150°C

0.79

V

斜率电阻

Slope resistance

rT

Tvj=150°C

1.4

mΩ

反向电流

Reverse current

IR

Tvj=150°C, VR=1600V

2

mA

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per diode / 每个二极管

0.25

K/W

Item

Symbol

Conditions

Value

Units

反向重复峰值电压

Peak repetitive reverse voltage

VRRM

Tvj=25°C

1600

V

最大正向均方根电流(每芯片)

Maximum RMS forward current per chip

IFRMSM

TC=80°C

165

A

最大整流器输出均方根电流

Maximum RMS current at rectifier output

IRMSM

TC=80°C

240

A

正向浪涌电流

Surge forward current

IFSM

tp=10ms, Tvj=25°C

2250

A

I²t -值

I²t-value

I2t

tp=10ms, Tvj=25°C

25000

A2s

通态电流临界上升率

Critical rate of rise of on-state current

(di/dt) cr

Tvj = 25°C

150

A/µs

通态电压临界上升率

Critical rate of rise of on-state voltage

(dv/dt) cr

Tvj = 130°C, VD=2/3VDRM

1500

V/µs

Characteristic Values

Item

Symbol

Conditions

Min. Typ. Max.

Units

正向电压

Forward voltage

VTM

Tvj = 130 °C, IT = 165 A

1.20

V

阈值电压

Threshold voltage

V(TO)

Tvj=130°C

0.85

V

斜率电阻

Slope resistance

rT

Tvj=130°C

2.20

mΩ

门极触发电流

Gate trigger current

IGT

Tvj=25°C, VD=12V, RL=33Ω

80

mA

门极触发电压

Gate trigger voltage

VGT

Tvj=25°C, VD=12V, RL=33Ω

1.50

V

门极不触发电流

Gate non-trigger current

IGD

Tvj=130°C, VD=6V

Tvj=130°C, VD=0.5 VDRM

6.0

3.0

mA

门极不触发电压

Gate non-trigger voltage

VGD

Tvj=130°C, VD=VDRM

0.2

V

维持电流

Holding current

IH

Tvj=25°C, IT=1A

160

mA

擎住电流

Latching current

IL

Tvj=25°C, IG=1.2IGT

250

mA

门极控制延迟时间

Gate controlled delay time

tgd

DIN IEC 747-6

Tvj=25°C, iGM=0.6A, diG/dt=0.6A/µs

1.2

µs

换流关断时间

Circuit commutated turn-off time

tq

Tvj = 130°C, iTM = 50 A

VRM = 100 V, VDM = 2/3 VDRM

dVD/dt = 20 V/µs, -diT/dt = 10 A/µs

150

µs

反向电流

Reverse current

IR

ID

Tvj=125°C, VR=1600V

20

mA

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per Thyristor / 每个晶闸管

0.19

K/W