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Solid Power-DS-SPS200F12K3-S04030013 V1.0
1200V 200A IGBT Full Bridge Module
Features:
□ 1200V Trench+ Field Stop technology
□ Freewheeling diodes with fast and soft reverse recovery
□ VCE(sat) with positive temperature coefficient
□ Low switching losses
□ Short circuit ruggedness
Typical Applications:
□ Motor Drives
□ Servo Drives
□ Auxiliary inverters
Package
Item | Symbol | Conditions | Values | Unit | |||
Isolation test voltage | VISOL | RMS, f = 50 Hz, t =1 min | 2.5 | kV | |||
Material of module baseplate | Cu | ||||||
Internal isolation | (class 1, IEC 61140) Basic insulation (class 1, IEC 61140) | Al2O3 | |||||
Creepage distance | dCreep | terminal to heatsink | 10.0 | mm | |||
Clearance | dClear | terminal to heatsink | 7.5 | mm | |||
Comparative tracking index | CTI | >200 | |||||
Item | Symbol | Conditions | Values | Unit | |||
Min. | Typ. | Max. | |||||
Stray inductance module | LsCE | 21 | nH | ||||
Module lead resistance, terminals - chip | RCC’+EE’ | TC=25℃ | 1.80 | mΩ | |||
Storage temperature | Tstg | -40 | 125 | ℃ | |||
Mounting torque for module mounting | M5 | 3 | 6 | Nm | |||
Weight | G | 300 | g |
IGBT
Maximum Rated Values
Item | Symbol | Conditions | Values | Unit | |
Collector-emitter Voltage | VCES | Tvj=25℃ | 1200 | V | |
Maximum gate-emitter voltage | VGES | ±20 | V | ||
Transient gate-emitter voltage | VGES | tp≤10μs,D=0.01 | ±30 | V | |
Continuous DC collector current | IC | TC=60℃ | 200 | A | |
Pulsed collector current,tp limited by Tjmax | ICpulse | 400 | A | ||
Power dissipation | Ptot | 750 | W |
Characteristic Values
Item | Symbol | Conditions | Values | Unit | |||
Min. | Typ. | Max. | |||||
Collector-emitter saturation voltage | VCE(sat) | IC=200A, VGE=15V | Tvj=25℃ | 1.60 | 2.10 | V | |
Tvj=125℃ | 1.80 | ||||||
Tvj=150℃ | 1.85 | ||||||
Gate threshold voltage | VGE(th) | VCE=VGE, IC=8mA | 5.2 | 6.0 | 6.7 | V | |
Collector-emitter cut-off current | ICES | VCE=1200V, VGE=0V | Tvj=25℃ | 100 | µA | ||
Tvj=150℃ | 5 | mA | |||||
Gate-emitter leakage current | IGES | VCE=0V,VGE=±20V, Tvj=25℃ | -200 | 200 | nA | ||
Gate Charge | QG | VCE=600V, IC=200A , VGE=±15V | 1.6 | μC | |||
Input Capacitance | Cies | VCE=25V, VGE=0V, f =100kHz | 24.7 | nF | |||
Output Capacitance | Coes | 0.9 | |||||
Reverse Transfer Capacitance | Cres | 0.2 | |||||
Turn-on delay time,inductive load | td(on) | VCC=600V,IC=200A RG=3.3Ω, VGE=15V | Tvj=25℃ | 388 | ns | ||
Tvj=125℃ | 428 | ns | |||||
Tvj=150℃ | 436 | ns | |||||
Rise Time,inductive load | tr | Tvj=25℃ | 44 | ns | |||
Tvj=125℃ | 52 | ns | |||||
Tvj=150℃ | 56 | ns | |||||
Turn-off delay time,inductive load | td(off) | VCC=600V,IC=200A RG=3.3Ω, VGE=15V | Tvj=25℃ | 484 | ns | ||
Tvj=125℃ | 572 | ns | |||||
Tvj=150℃ | 588 | ns | |||||
Fall time,inductive load | tf | Tvj=25℃ | 132 | ns | |||
Tvj=125℃ | 180 | ns | |||||
Tvj=150℃ | 196 | ns | |||||
Turn-on energy loss per pulse | Eon | VCC=600V,IC=200A RG=3.3Ω, VGE=15V | Tvj=25℃ | 6.5 | mJ | ||
Tvj=125℃ | 9.6 | mJ | |||||
Tvj=150℃ | 11.2 | mJ | |||||
Turn off Energy loss per pulse | Eoff | Tvj=25℃ | 11.8 | mJ | |||
Tvj=125℃ | 16.4 | mJ | |||||
Tvj=150℃ | 17.3 | mJ | |||||
SC data | ISC | VGE≤15V, VCC=800V | tp≤10µs Tvj=150℃ | 750 | A | ||
IGBT thermal resistance,junction-case | RthJC | 0.20 | K /W | ||||
Operating Temperature | TJop | -40 | 150 | ℃ |
Diode
Maximum Rated Values
Item | Symbol | Conditions | Values | Unit | |
Repetitive reverse voltage | VRRM | Tvj=25℃ | 1200 | V | |
Continuous DC forward current | IF | 200 | A | ||
Diode pulsed current,tp limited by TJmax | IFpulse | 400 |
Characteristic Values
Item | Symbol | Conditions | Values | Unit | |||
Min. | Typ. | Max. | |||||
Forward voltage | VF | IF=200A , VGE=0V | Tvj=25℃ | 1.5 | 1.80 | 2.40 | V |
Tvj=125℃ | 1.80 | ||||||
Tvj=150℃ | 1.80 | ||||||
Reverse recovery time | trr | IF=200A dIF/dt=-6000A/μs (Tvj=150°C) VR=600V, VGE=-15V | Tvj=25℃ | 864 | ns | ||
Tvj=125℃ | 1170 | ||||||
Tvj=150℃ | 1280 | ||||||
Peak reverse recovery current | IRRM | Tvj=25℃ | 270 | A | |||
Tvj=125℃ | 290 | ||||||
Tvj=150℃ | 300 | ||||||
Reverse recovery charge | QRR | Tvj=25℃ | 22.6 | µC | |||
Tvj=125℃ | 34.8 | ||||||
Tvj=150℃ | 40.0 | ||||||
Reverse recovery energy loss per pulse | Erec | Tvj=25℃ | 4.0 | mJ | |||
Tvj=125℃ | 13.7 | ||||||
Tvj=150℃ | 16.1 | ||||||
Diode thermal resistance,junction-case | RthJCD | 0.30 | K /W | ||||
Operating Temperature | TJop | -40 | 150 | ℃ |
NTC-Thermistor
Characteristic Values
Item | Symbol | Conditions | Values | Unit | |
Rated resistance | R25 | TC=25℃ | 5.00 | kΩ | |
B-value | R25/50 | 3375 | K |
Output characteristic(typical) Output characteristic(typical)
IC = f (VCE) IC = f (VCE) Tvj= 150°C
IGBT
Transfer characteristic(typical) Switching losses IGBT (typical)
IC = f (VGE) VGE = ±15V, IC = 200A, VCE = 600V
VCE = 20V VGE = ±15V, IC = 200A, VCE = 600V
IGBT RBSOA
Switching losses IGBT (typical) Reverse bias safe operating area(RBSOA)
E = f (IC) IC =f (VCE)
VGE = ±15V, RG = 3.3Ω , VCE = 600V VGE = ±15V, Rgoff = 3.3Ω, Tvj = 150°C
Typical capacitance as a function of collector-emitter voltage Gate charge (typical)
C = f (VCE) VGE = f (QG)
f = 100 kHz, VGE = 0V IC = 200A, VCE = 600V
IGBT
IGBT transient thermal impedance as a function of pulse width Forward characteristic of Diode (typical)
Zth(j-c) = f (t) IF = f (VF)
Switching losses Diode(typical) Switching losses Diode(typical)
Erec = f (RG) Erec = f (IF)
IF = 200A, VCE = 600V RG = 3.3Ω, VCE = 600V
Diode transient thermal impedance as a function of pulse width NTC-Thermistor-temperature characteristic (typical)
Zth(j-c) = f (t) R = f (T)
This is a 1200V, 200A IGBT full bridge module. Full bridge configurations are commonly used in power electronic applications such as motor drives, inverters, and power supplies. The voltage rating indicates the maximum voltage the module can handle, while the current rating represents the maximum current it can handle. When using such high-power modules, proper considerations for heat sinking, cooling, and protection circuits are necessary to ensure reliable and safe operation.
Circuit diagram headline
Package outlines