1600V 180A 3-Phase Half Controlled + IGBT Braking Chopper Module-SPS180RC16K2

Item

Symbol

Conditions

Value

Units

反向重复峰值电压

Peak repetitive reverse voltage

VRRM

Tvj=25°C, IR=0.1mA

1600

V

最大正向均方根电流(每芯片)

Maximum RMS forward current per chip

IFRMSM

TC=80°C, Tvj=150°C

150

A

最大整流器输出均方根电流

Maximum RMS current at rectifier output

IRMSM

TC=80°C

180

A

正向浪涌电流

Surge forward current

IFSM

tp=10ms, Tvj=25°C

1300

A

I2t-值

I²t-value

I2t

tp=10ms, Tvj=25°C

8450

A2s

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

正向电压

Forward voltage

VF

Tvj=25°C, IF=110A

1.05 1.20

V

阈值电压

Threshold voltage

VTO

Tvj=150°C

0.80

V

斜率电阻

Slope resistance

rT

Tvj=150°C

2.40

mΩ

反向电流

Reverse current

IR

Tvj=150°C, VR=1600V

2

mA

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per diode / 每个二极管

0.28

K/W

Item

Symbol

Conditions

Value

Units

反向重复峰值电压

Peak repetitive reverse voltage

VRRM

Tvj=25°C

1600

V

最大正向均方根电流(每芯片)

Maximum RMS forward current per chip

IFRMSM

TC=80°C

150

A

最大整流器输出均方根电流

Maximum RMS current at rectifier output

IRMSM

TC=80°C

180

A

正向浪涌电流

Surge forward current

IFSM

tp=10ms, Tvj=25°C

tp=10ms, Tvj=130°C

1800

1450

A

A

I²t -值

I²t-value

I2t

tp=10ms, Tvj=25°C

tp=10ms, Tvj=130°C

16200

10510

A2s

A2s

通态电流临界上升率

Critical rate of rise of on-state current

(di/dt) cr

Tvj = 130°C

100

A/µs

通态电压临界上升率

Critical rate of rise of on-state voltage

(di/dt) cr

Tvj = 130°C, VD=2/3VDRM

1000

V/µs

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

正向电压

Forward voltage

VTM

Tvj = 130 °C, IT = 110 A

1.30

V

阈值电压

Threshold voltage

V(TO)

Tvj=130°C

0.90

V

斜率电阻

Slope resistance

rT

Tvj=130°C

3.20

mΩ

门极触发电流

Gate trigger current

IGT

Tvj=25°C, VD=12V, RL=30Ω

100

mA

门极触发电压

Gate trigger voltage

VGT

Tvj=25°C, VD=6V

2.00

V

门极不触发电流

Gate non-trigger current

IGD

Tvj=130°C, VD=6V

Tvj=130°C, VD=0.5 VDRM

6.0

3.0

mA

mA

门极不触发电压

Gate non-trigger voltage

VGD

Tvj=130°C, VD=VDRM

0.25

V

维持电流

Holding current

IH

Tvj=25°C, IT=1A

250

mA

擎住电流

Latching current

IL

Tvj=25°C, IG=1.2IGT

300

mA

门极控制延迟时间

Gate controlled delay time

tgd

DIN IEC 747-6

Tvj=25°C, iGM=0.6A, diG/dt=0.6A/µs

1.2

µs

换流关断时间

Circuit commutated turn-off time

tq

Tvj = 130°C, iTM = 50 A

VRM = 100 V, VDM = 2/3 VDRM

dVD/dt = 20 V/µs, -diT/dt = 10 A/µs

150

µs

反向电流

Reverse current

IR

ID

Tvj=125°C, VR=1600V

20

mA

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per Thyristor / 每个晶闸管

0.24

K/W

IGBT Brake-Chopper / IGBT 制动-斩波器

Maximum Rated Values / 最大额定值

连续集电极直流电流 IC nom TC=80°C, Tvj=175°C 100 A

Continuous DC collector current IC TC=25°C, Tvj=175°C 140 A

开通延迟时间(电感负载)

Turn-on delay time, inductive load

td( on) Tvj=25°C 125 µs

上升时间(电感负载)

Rise time, inductive load

tr

Tvj=25°C

30

µs

关断延迟时间(电感负载)

Turn-off delay time, inductive load

td(off)

IC=100A, VCE=600V

VGE=±15V

Tvj=25°C

300

µs

下降时间(电感负载)

Fall time, inductive load

tf

RGon=1.5 Ω

RGoff=1.5 Ω

Tvj=25°C

165

µs

开通损耗能量(每脉冲)

Turn-on energy loss per pulse

Eon

Tvj=25°C

2.4

mJ

关断损耗能量(每脉冲)

Turn-off energy loss per pulse

Eoff

Tvj=25°C

7.5

mJ

A

K/W

短路数据

SC data

ISC

VGE≤15V, VCC=800V

VCEmax=VCES-LsCE·di/dt, tp=10µs, Tvj=150°C

360

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per IGBT / 每个 IGBT

0.25

Diode, Brake-Chopper /

Maximum Rated Values /

反向恢复峰值电流

Peak reverse recovery current

IRM Tvj=150°C 50 A

反向恢复时间

Reverse recovery time

Trr

IF=50A

diF/dtoff=1300A/µs

Tvj=150°C

380

ns

恢复电荷

Reverse recovery charge

Qr

VR = 600 V

VGE=-15V

Tvj=150°C

8

µC

反向恢复损耗(每脉冲)

Reverse recovery energy (per pulse)

Erec

Tvj=150°C

3.5

mJ

0.70 K/W

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per diode / 每个二极管

Item

Symbol

Conditions

Value

Units

绝缘测试电压

Isolation test voltage

VISOL

RMS, f=50Hz, t=1min

2.5

kV

模块基板材料

Material of module baseplate

Cu

内部绝缘

Internal isolation

基本绝缘 (class 1, IEC 61140)

Basic insulation (class 1, IEC 61140)

Al2O3

爬电距离

Creepage distance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

10.0

mm

电气间隙

Clearance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

7.5

mm

相对电痕指数

Comperative tracking index

CTI

> 200

Item

Symbol

Conditions

Min.

Typ.

Max.

Units

杂散电感,模块

Stray inductance module

LsCE

50

nH

最大结温

Maximum junction temperature

Tvj(max)

逆变器, 制动-斩波器 /inverter, brake-chopper 整流器/rectifier

175

125

°C

°C

在开关状态下温度

Temperature under switching conditions

Tvj(op)

逆变器, 制动-斩波器 /inverter, brake-chopper 整流器/rectifier

-40

-40

150

125

°C

°C

储存温度

Storage temperature

Tstg

-40

125

°C

模块安装的安装扭距

Mounting torque for module mounting

M

3.00

6.00

Nm

重量

Weight

G

180

g