VS-GT80DA120U Insulated Gate Bipolar Transistor Vishay Semiconductors

Description:IGBT MOD 1200V 139A 658W SOT227
Category:Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules
Current - Collector (Ic) (Max):139 A
Product Status:Active
Mounting Type:Chassis Mount
Package:Bulk
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Location: Shenzhen China
Address: 19A, Huaqiang North Hangdu Building, Futian District, Shenzhen
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IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227

China VS-GT80DA120U  Insulated Gate Bipolar Transistor  Vishay Semiconductors supplier

VS-GT80DA120U Insulated Gate Bipolar Transistor Vishay Semiconductors

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