NP100P06PDG-E1-AY

Category:Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:-
Vgs(th) (Max) @ Id:2.5V @ 1mA
Operating Temperature:175°C (TJ)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
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Location: Hong kong China
Address: Room 808, Tower A, 8-10 Wah Sing Street, Kwai Chung, Hong Kong
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P-Channel 60 V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263
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NP100P06PDG-E1-AY

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