FF900R12IE4

Gate-Emitter Leakage Current:400 nA
Product Category:IGBT Modules
Continuous Collector Current at 25 C:900 A
Collector- Emitter Voltage VCEO Max:1200 V
Pd - Power Dissipation:5.1 kW
Maximum Operating Temperature:+ 150 C
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Location: Hong kong China
Address: Room 808, Tower A, 8-10 Wah Sing Street, Kwai Chung, Hong Kong
Supplier`s last login times: within 1 hours
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The FF900R12IE4,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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China FF900R12IE4 supplier

FF900R12IE4

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