2N6027RLRAG
Category:Discrete Semiconductor Products
Transistors
Programmable Unijunction
Current - Valley (Iv):50 µA
Product Status:Obsolete
Package:Tape & Reel (TR)
Cut Tape (CT)
Current - Gate to Anode Leakage (Igao):10 nA
Series:-
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Shenzhen China
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Bao Yun Da R&D Comprehensive Building, Qianjin 2nd Road, Xixiang Street, Bao'an District, Shenzhen
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Programmable Unijunction Transistor (UJT) 40V 300 mW TO-226-3,
TO-92-3 (TO-226AA) Formed Leads
2N6027RLRAG
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