SPP04N60C3HKSA1
Category:Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:-
Vgs(th) (Max) @ Id:3.9V @ 200µA
Operating Temperature:-55°C ~ 150°C (TJ)
Package / Case:TO-220-3
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
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Shenzhen China
Address:
Bao Yun Da R&D Comprehensive Building, Qianjin 2nd Road, Xixiang Street, Bao'an District, Shenzhen
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within 36 hours
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Product Details
N-Channel 650 V 4.5A (Tc) 50W (Tc) Through Hole PG-TO220-3-1
SPP04N60C3HKSA1
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