High Efficiency C-Band GaN 50W Power Amplifier Chip YP40601650T for 4400-6000MHz
Brand Name:SZHUASHI
Model Number:YP40601650T
Minimum Order Quantity:2 PCS
Delivery Time:2-7days
Payment Terms:T/T
Place of Origin:Jiangsu，China
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Location:
Suzhou Jiangsu China
Address:
Room 107, Sanjiang Yuan, 399 Linquan Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province
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Product Details
SZHUASHI High Efficiency C-Band GaN 50W Power Amplifier Chip YP40601650T for 4400-6000MHz
Product Description
YP40601650T is a 50-watt, internally matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the YP40601650T ideal for multiple applications with frequency from 4400MHz to 6000MHz.
| Pout | 50W |
| Frequency | 4500MHz-6000MHz |
Features
- High Efficiency and Linear Gain Operation
- Negative Gate Voltage and Bias Sequencing Required
- Excellent Thermal Stability and Excellent Ruggedness
- Metal Based Package Sealed with Ceramic-Epoxy Lid
- Gold Metallization System: Chip-Wire Bond-Package
High Efficiency C-Band GaN 50W Power Amplifier Chip YP40601650T for 4400-6000MHz
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