50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor
Brand Name:INNOTION
Model Number:YP01401650T
Delivery Time:5-8work days
Place of Origin:Jiangsu, China
Price:Prices are negotiable
Packaging Details:Carton
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Location:
Suzhou Jiangsu China
Address:
Room 107, Sanjiang Yuan, 399 Linquan Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province
Supplier`s last login times:
within 48 hours
Product Details
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Product Details
INNOTION YP01401650T 50W Gallium Nitride 28V DC-4GHz High Electron Mobility GAN RF Power Transistor
Product Description
Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange package.
| Votage | 28V |
| Pout | 50W |
Features:
High Efficiency and Linear Gain Operation
Negative Gate Voltage and Bias Sequencing Required
Excellent Thermal Stability and Excellent Ruggedness
Metal Based Package Sealed with Ceramic-Epoxy Lid
Gold Metallization System: Chip-Wire Bond-Package
Company Information
Suzhou Industrial Park. Founded in 2010. The only official shop! We
sell our own products at the best price, such as WiFi amplifier,
VCO, sweep signal source, wireless card group and other product
lines;
Professional people do professional things. We have mastered some
core technologies in the product field and have a number of
independent intellectual property rights.
Our products have been sold to many domestic cities, but also very
popular with many foreign customers, such as Russia, the United
States, South Korea, Vietnam, Sweden and so on.
Our Services
We stand by our commitment to ensure first class customer service.
50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor
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